Parent Category: 2013 New Products

Transistors

Cree released two new gallium nitride (GaN) high electron mobility transistors (HEMTs) ideal for use in 1.2–1.4GHz L-Band radar amplifier systems: the 250 W CGHV14250 and the 500 W CGHV14500. Featuring the highest known L-Band efficiency performance at 85°C, high power gain performance, and wide bandwidth capabilities, the new transistors are designed to enhance the performance of band-specific applications ranging from UHF to 1800MHz.

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