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Parent Category: Rocktabs Archive
GaN HEMT
Cree has developed a family of 50V discrete GaN high electron mobility transistor (HEMT) die for operation up to 6 GHz. The new 40W CGHV60040D and 170W CGHV60170D represent the only 50V bare GaN HEMT die available on the market and are now available for purchase. A 50V, 20W die rated for up to 6 GHz operation and a 50V, 320W die rated for 4 GHz operation are scheduled for release by the end of 2014.
Cree
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