Friday, March 29, 2024
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Transistors

Parent Category: Rocktabs Archive

1610 HFE hotProducts 06

Transistors

Richardson RFPD announced availability and design support for four new GaN on SiC high-electron-mobility transistors from Qorvo. The QPD1000 is a 15 W (P3dB), 50Ù-input matched discrete GaN on SiC HEMT that operates from 30 MHz to 1.215 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The CW- and pulse-capable device is housed in a 5 mm x 6 mm leadless SMT package that saves real estate.

Richardson RFPD
richardsonrfpd.com

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